圖片 |
型號(hào) |
品牌 |
封裝 |
數(shù)量 |
描述 |
PDF資料 |
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ALD111933MAL |
Advanced Linear Devices |
8-MSOP |
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MOSFET Dual N-Channel |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,閘/... |
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ALD111933PAL |
Advanced Linear Devices |
8-PDIP |
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MOSFET Dual N-Channel |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,閘/... |
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ALD111933SAL |
Advanced Linear Devices |
8-SOIC |
500 |
MOSFET Dual N-Channel |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,閘/... |
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ALD1121EPA |
Advanced Linear Devices |
PDIP-8 |
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MOSFET Dual EPAD(R) N-Ch |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,閘/... |
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ALD1121EPAL |
Advanced Linear Devices |
PDIP-8 |
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MOSFET Dual EPAD(R) N-Ch |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,閘/... |
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ALD1121ESA |
Advanced Linear Devices |
SOIC-8 |
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MOSFET Dual EPAD(R) N-Ch |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,配置... |
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ALD1121ESAL |
Advanced Linear Devices |
SOIC-8 |
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MOSFET Dual EPAD(R) N-Ch |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,閘/... |
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ALD1123EPC |
Advanced Linear Devices |
PDIP-16 |
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MOSFET Quad EPAD(R) N-Ch |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,閘/... |
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ALD1123EPCL |
Advanced Linear Devices |
PDIP-16 |
|
MOSFET Quad EPAD(R) N-Ch |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,閘/... |
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ALD1123ESC |
Advanced Linear Devices |
SOIC-16 |
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MOSFET Quad EPAD(R) N-Ch |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,配置... |
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ALD1123ESCL |
Advanced Linear Devices |
SOIC-16 |
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MOSFET Quad EPAD(R) N-Ch |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,閘/... |
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ALD114804APCL |
Advanced Linear Devices |
16-PDIP |
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MOSFET Quad EPAD(R) N-Ch |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,閘/... |
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ALD114804ASCL |
Advanced Linear Devices |
16-SOIC |
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MOSFET Quad EPAD(R) N-Ch |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,閘/... |
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ALD114804PCL |
Advanced Linear Devices |
16-PDIP |
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MOSFET Quad EPAD(R) N-Ch |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,閘/... |
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ALD114804SCL |
Advanced Linear Devices |
16-SOIC |
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MOSFET Quad EPAD(R) N-Ch |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,閘/... |
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ALD114813PCL |
Advanced Linear Devices |
16-PDIP |
|
MOSFET Quad EPAD(R) N-Ch |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,閘/... |
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ALD114813SCL |
Advanced Linear Devices |
16-SOIC |
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MOSFET Quad EPAD(R) N-Ch |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,閘/... |
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ALD114835PCL |
Advanced Linear Devices |
16-PDIP |
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MOSFET Quad EPAD(R) N-Ch |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,閘/... |
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ALD114835SCL |
Advanced Linear Devices |
16-SOIC |
290 |
MOSFET Quad EPAD(R) N-Ch |
|
參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,閘/... |
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ALD114904APAL |
Advanced Linear Devices |
8-PDIP |
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MOSFET Dual EPAD(R) N-Ch |
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參數(shù):制造商:Advanced Linear Devices,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:10 V,閘/... |