Vishay/Siliconix
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Vishay/Siliconix功率MOSFET晶體管和集成電路 (IC)用于管理和轉(zhuǎn)換計(jì)算機(jī)、手機(jī)和通信基礎(chǔ)架構(gòu)中的電源,也可用計(jì)算機(jī)磁盤驅(qū)動(dòng)器和汽車系統(tǒng)中的運(yùn)動(dòng)控制。 Vishay/Siliconix模擬開關(guān)IC用于對(duì)儀表儀器和多種工業(yè)產(chǎn)品中的模擬信號(hào)進(jìn)行感應(yīng)、開關(guān)和路徑設(shè)定。 |
圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
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IRF634NSTRLPBF | Vishay/Siliconix | D2PAK | MOSFET N-Chan 250V 8.0 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:250 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF634NSTRRPBF | Vishay/Siliconix | D2PAK | MOSFET N-Chan 250V 8.0 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:250 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF634PBF | Vishay/Siliconix | TO-220-3 | 6,869 | MOSFET N-Chan 250V 8.1 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:250 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF634S | Vishay/Siliconix | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | MOSFET N-Chan 250V 8.1 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:250 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF634SPBF | Vishay/Siliconix | D2PAK(TO-263) | MOSFET N-Chan 250V 8.1 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:250 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF634STRLPBF | Vishay/Siliconix | D2PAK(TO-263) | MOSFET N-Chan 250V 8.1 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:250 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF634STRRPBF | Vishay/Siliconix | D2PAK(TO-263) | MOSFET N-Chan 250V 8.1 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:250 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF640 | Vishay/Siliconix | TO-220 | MOSFET N-Chan 200V 18 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF640LPBF | Vishay/Siliconix | TO-262-3 | MOSFET N-Chan 200V 18 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF640PBF | Vishay/Siliconix | TO-220-3 | 2,248 | MOSFET N-Chan 200V 18 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF640S | Vishay/Siliconix | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | MOSFET N-Chan 200V 18 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF640SPBF | Vishay/Siliconix | D2PAK(TO-263) | 2,416 | MOSFET N-Chan 200V 18 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF640STRL | Vishay/Siliconix | D2PAK(TO-263) | MOSFET N-Chan 200V 18 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF640STRLPBF | Vishay/Siliconix | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | 800 | MOSFET N-Chan 200V 18 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF640STRR | Vishay/Siliconix | D2PAK(TO-263) | MOSFET N-Chan 200V 18 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF640STRRPBF | Vishay/Siliconix | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | 823 | MOSFET N-Chan 200V 18 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF644 | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 250V 14 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:250 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF644LPBF | Vishay/Siliconix | TO-220AB | MOSFET N-Chan 250V 14 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:250 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF644N | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 250V 14 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:250 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF644NL | Vishay/Siliconix | TO-262 | MOSFET N-Chan 250V 14 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:250 V,閘/源擊穿電壓:+/- 20 V,漏... |
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