Vishay/Siliconix
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Vishay/Siliconix功率MOSFET晶體管和集成電路 (IC)用于管理和轉換計算機、手機和通信基礎架構中的電源,也可用計算機磁盤驅動器和汽車系統中的運動控制。 Vishay/Siliconix模擬開關IC用于對儀表儀器和多種工業產品中的模擬信號進行感應、開關和路徑設定。 |
圖片 | 型號 | 品牌 | 封裝 | 數量 | 描述 | PDF資料 |
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SUD40N04-10A-E3 | Vishay/Siliconix | TO-252AA | MOSFET 40V 40A 71W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD40N06-25L | Vishay/Siliconix | TO-252-3 | MOSFET 60V 20A 75W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD40N06-25L-E3 | Vishay/Siliconix | TO-252-3 | MOSFET 60V 20A 75W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD40N08-16 | Vishay/Siliconix | TO-252-3 | MOSFET 80V 40A 100W | ||
參數:制造商:Vishay,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:80 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:40 A,電阻... | ||||||
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SUD40N08-16-E3 | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | 21,553 | MOSFET 80V 40A 100W | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:80 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD40N10-25 | Vishay/Siliconix | TO-252-3 | MOSFET 100V 40A 33W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SUD40N10-25-E3 | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | MOSFET 100V 40A 33W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SUD42N03-3M9P-GE3 | Vishay/Siliconix | TO-252AA | MOSFET 30V 107A N-CH MOSFET | ||
參數:制造商:Vishay,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,漏極連續電流:107 A,電阻汲極/源極 RDS(導通):0.... | ||||||
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SUD45N05-20L | Vishay/Siliconix | TO-252-3 | MOSFET 50V 30A 75W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:50 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD45N05-20L-E3 | Vishay/Siliconix | TO-252-3 | MOSFET 50V 30A 75W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:50 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD45P03-10 | Vishay/Siliconix | TO-252-3 | MOSFET 30V 15A 70W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD45P03-10-E3 | Vishay/Siliconix | TO-252AA | MOSFET 30V 15A 70W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD45P03-15 | Vishay/Siliconix | TO-252-3 | MOSFET 30V 13A 70W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD45P03-15A | Vishay/Siliconix | TO-252-3 | MOSFET 30V 13A 70W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD45P03-15A-E3 | Vishay/Siliconix | TO-252-3 | MOSFET 30V 13A 70W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD45P03-15-E3 | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | MOSFET 30V 13A 70W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD50N02-04P | Vishay/Siliconix | TO-252-3 | MOSFET 20V 34A 8.3W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD50N02-04P-E3 | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | MOSFET 20V 34A 8.3W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD50N02-06 | Vishay/Siliconix | TO-252-3 | MOSFET 20V 30A 100W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SUD50N02-06-E3 | Vishay/Siliconix | TO-252-3 | MOSFET 20V 30A 100W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... |
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