Vishay/Siliconix
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Vishay/Siliconix功率MOSFET晶體管和集成電路 (IC)用于管理和轉換計算機、手機和通信基礎架構中的電源,也可用計算機磁盤驅動器和汽車系統中的運動控制。 Vishay/Siliconix模擬開關IC用于對儀表儀器和多種工業產品中的模擬信號進行感應、開關和路徑設定。 |
圖片 | 型號 | 品牌 | 封裝 | 數量 | 描述 | PDF資料 |
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IRFR024TRRPBF | Vishay/Siliconix | DPAK | MOSFET N-Chan 60V 14 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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IRFR110 | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | MOSFET N-Chan 100V 4.3 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFR110PBF | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | 1,410 | MOSFET N-Chan 100V 4.3 Amp | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFR110TR | Vishay/Siliconix | D-Pak | MOSFET N-Chan 100V 4.3 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFR110TRL | Vishay/Siliconix | D-Pak | MOSFET N-Chan 100V 4.3 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFR110TRLPBF | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | MOSFET N-Chan 100V 4.3 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFR110TRPBF | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | 12,483 | MOSFET N-Chan 100V 4.3 Amp | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFR110TRRPBF | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | MOSFET N-Chan 100V 4.3 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFR120 | Vishay/Siliconix | D-Pak | MOSFET N-Chan 100V 7.7 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFR120PBF | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | 9,610 | MOSFET N-Chan 100V 7.7 Amp | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFR120TR | Vishay/Siliconix | D-Pak | MOSFET N-Chan 100V 7.7 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFR120TRL | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | MOSFET N-Chan 100V 7.7 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFR120TRLPBF | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | 12,487 | MOSFET N-Chan 100V 7.7 Amp | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFR120TRPBF | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | 1,698 | MOSFET N-Chan 100V 7.7 Amp | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFR120TRR | Vishay/Siliconix | D-Pak | MOSFET N-Chan 100V 7.7 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFR120TRRPBF | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | MOSFET N-Chan 100V 7.7 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFR1N60A | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | MOSFET N-Chan 600V 1.4 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏... | ||||||
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IRFR1N60APBF | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | 3,000 | MOSFET N-Chan 600V 1.4 Amp | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏... | ||||||
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IRFR1N60ATR | Vishay/Siliconix | D-Pak | MOSFET N-Chan 600V 1.4 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏... | ||||||
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IRFR1N60ATRLPBF | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | 99 | MOSFET N-Chan 600V 1.4 Amp | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏... |
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