Vishay/Siliconix
|
Vishay/Siliconix功率MOSFET晶體管和集成電路 (IC)用于管理和轉(zhuǎn)換計(jì)算機(jī)、手機(jī)和通信基礎(chǔ)架構(gòu)中的電源,也可用計(jì)算機(jī)磁盤驅(qū)動(dòng)器和汽車系統(tǒng)中的運(yùn)動(dòng)控制。 Vishay/Siliconix模擬開關(guān)IC用于對(duì)儀表儀器和多種工業(yè)產(chǎn)品中的模擬信號(hào)進(jìn)行感應(yīng)、開關(guān)和路徑設(shè)定。 |
圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
---|---|---|---|---|---|---|
![]() |
SI4862DY-T1-E3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 16 Volt 25 Amp 3.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:16 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
![]() |
SI4862DY-T1-GE3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 16V 25A 3.5W 3.3mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:16 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
![]() |
SI4864DY | Vishay/Siliconix | SO-8 | MOSFET 20V 25A 3.5W | ||
參數(shù):制造商:Vishay,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)電流:17 A,電阻汲... | ||||||
![]() |
SI4864DY-E3 | Vishay/Siliconix | SO-8 | MOSFET 20V 25A 3.5W | ||
參數(shù):制造商:Vishay,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)電流:17 A,電阻汲... | ||||||
![]() |
SI4864DY-T1 | Vishay/Siliconix | SO-8 | MOSFET 20V 25A 1.6W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
![]() |
SI4864DY-T1-E3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 20 Volt 25 Amp 3.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
![]() |
SI4864DY-T1-GE3 | Vishay/Siliconix | 8-SOIC | 1,675 | MOSFET 20V 25A 3.5W 3.5mohm @ 4.5V | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
![]() |
SI4866BDY-T1-E3 | Vishay/Siliconix | 8-SOIC | MOSFET 12V 21.5A 4.45W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
|
SI4866BDY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 12V 21.5A 4.45W 5.3mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
![]() |
SI4866DY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET N-Ch 12 Volt 11 Amp | ||
參數(shù):制造商:Vishay,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)電流:17 A,電阻汲... | ||||||
![]() |
SI4866DY-T1 | Vishay/Siliconix | SOIC-8 Narrow | 780 | MOSFET 12V 17A 1.6W | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
![]() |
SI4866DY-T1-E3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | 7,158 | MOSFET 12 Volt 11 Amp 3.0W | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
![]() |
SI4866DY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 12V 17A 3.0W 5.5mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
![]() |
SI4872DY | Vishay/Siliconix | SO-8 | MOSFET 30V 15A 3.1W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
![]() |
SI4872DY-E3 | Vishay/Siliconix | SO-8 | MOSFET 30V 15A 3.1W | ||
參數(shù):制造商:Vishay,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)電流:15 A,電阻... | ||||||
![]() |
SI4872DY-T1 | Vishay/Siliconix | SO-8 | MOSFET 30V 15A 3.1W | ||
參數(shù):制造商:Vishay,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)電流:15 A,電阻... | ||||||
![]() |
SI4872DY-T1-E3 | Vishay/Siliconix | SO-8 | 11 | MOSFET 30V 15A 3.1W | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
![]() |
SI4874BDY-T1-E3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | 10,837 | MOSFET 30V 16A 0.007Ohm | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
![]() |
SI4874BDY-T1-GE3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 30V 16A 3.0W 7.0mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
![]() |
SI4874DY-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30V 15A 3.1W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... |
42/219 首頁 上頁 [37] [38] [39] [40] [41] [42] [43] [44] [45] [46] [47] 下頁 尾頁