Vishay/Siliconix
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Vishay/Siliconix功率MOSFET晶體管和集成電路 (IC)用于管理和轉(zhuǎn)換計(jì)算機(jī)、手機(jī)和通信基礎(chǔ)架構(gòu)中的電源,也可用計(jì)算機(jī)磁盤驅(qū)動器和汽車系統(tǒng)中的運(yùn)動控制。 Vishay/Siliconix模擬開關(guān)IC用于對儀表儀器和多種工業(yè)產(chǎn)品中的模擬信號進(jìn)行感應(yīng)、開關(guān)和路徑設(shè)定。 |
圖片 | 型號 | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
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SI4884DY-T1-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30V 12A 2.95W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4886DY | Vishay/Siliconix | SO-8 | MOSFET 30V 13A 2.95W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4886DY-E3 | Vishay/Siliconix | SO-8 | MOSFET 30V 13A 2.95W | ||
參數(shù):制造商:Vishay,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)電流:13 A,電阻... | ||||||
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SI4886DY-T1 | Vishay/Siliconix | SO-8 | MOSFET 30V 13A 2.95W | ||
參數(shù):制造商:Vishay,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)電流:13 A,電阻... | ||||||
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SI4886DY-T1-E3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 30V 13A 2.95W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4886DY-T1-GE3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 30V 13A 2.95W 10mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4888DY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30V 16A 3.5W | ||
參數(shù):制造商:Vishay,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)電流:16 A,電阻... | ||||||
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SI4888DY-E3 | Vishay/Siliconix | SO-8 | MOSFET 30V 16A 3.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4888DY-T1 | Vishay/Siliconix | SO-8 | MOSFET 30V 16A 3.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4888DY-T1-E3 | Vishay/Siliconix | 8-SOIC | MOSFET 30V 16A 3.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4888DY-T1-GE3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 30V 16A 3.5W 7.0mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4890BDY-T1-E3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 30V 16A 5.7W 12mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 25 V,漏極... | ||||||
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SI4890BDY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 30V 16A 5.7W 12mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 25 V,漏極... | ||||||
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SI4890DY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30V 11A 2.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 25 V,漏極... | ||||||
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SI4890DY-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30V 11A 2.5W | ||
參數(shù):制造商:Vishay,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 25 V,漏極連續(xù)電流:11 A,電阻... | ||||||
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SI4890DY-T1 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30V 11A 2.5W | ||
參數(shù):制造商:Vishay,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 25 V,漏極連續(xù)電流:11 A,電阻... | ||||||
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SI4890DY-T1-E3 | Vishay/Siliconix | 8-SOIC | MOSFET 30V 11A 2.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 25 V,漏極... | ||||||
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SI4890DY-T1-GE3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 30V 11A 2.5W 12mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 25 V,漏極... | ||||||
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SI4892DY | Vishay/Siliconix | SO-8 | MOSFET 30V 12.4A 3.1W | ||
參數(shù):制造商:Vishay,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)電流:8.8 A,電... | ||||||
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SI4892DY-E3 | Vishay/Siliconix | SO-8 | MOSFET 30V 12.4A 3.1W | ||
參數(shù):制造商:Vishay,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)電流:8.8 A,電... |
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