Vishay/Siliconix
|
Vishay/Siliconix功率MOSFET晶體管和集成電路 (IC)用于管理和轉(zhuǎn)換計(jì)算機(jī)、手機(jī)和通信基礎(chǔ)架構(gòu)中的電源,也可用計(jì)算機(jī)磁盤(pán)驅(qū)動(dòng)器和汽車(chē)系統(tǒng)中的運(yùn)動(dòng)控制。 Vishay/Siliconix模擬開(kāi)關(guān)IC用于對(duì)儀表儀器和多種工業(yè)產(chǎn)品中的模擬信號(hào)進(jìn)行感應(yīng)、開(kāi)關(guān)和路徑設(shè)定。 |
圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
---|---|---|---|---|---|---|
![]() |
SI4965DY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 8V 8A 2W | ||
參數(shù):制造商:Vishay,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:8 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)電流:8 A,電阻汲極/... | ||||||
![]() |
SI4965DY-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 8V 8A 2W | ||
參數(shù):制造商:Vishay,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:8 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)電流:8 A,電阻汲極/... | ||||||
![]() |
SI4965DY-T1 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 8V 8A 2W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:8 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)... | ||||||
![]() |
SI4965DY-T1-E3 | Vishay/Siliconix | 8-SOIC | MOSFET 8V 8A 2W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:8 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)... | ||||||
![]() |
SI4965DY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 8.0V 8.0A 2.0W 21mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:8 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)... | ||||||
![]() |
SI4966DY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 20V 7.1A 2W | ||
參數(shù):制造商:Vishay,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極連續(xù)電流:7.1 A,電... | ||||||
![]() |
SI4966DY-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 20V 7.1A 2W | ||
參數(shù):制造商:Vishay,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極連續(xù)電流:7.1 A,電... | ||||||
![]() |
SI4966DY-T1 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 20V 7.1A 2W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
![]() |
SI4966DY-T1-E3 | Vishay/Siliconix | 8-SOIC | MOSFET 20V 7.1A 2W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
![]() |
SI4966DY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 20V 7.1A 2.0W 25mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
![]() |
SI4967DY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 12V 7.5A 2W | ||
參數(shù):制造商:Vishay,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)電流:7.5 A,電阻... | ||||||
![]() |
SI4967DY-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 12V 7.5A 2W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
![]() |
SI4967DY-T1 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 12V 7.5A 2W | ||
參數(shù):制造商:Vishay,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)電流:7.5 A,電阻... | ||||||
![]() |
SI4967DY-T1-E3 | Vishay/Siliconix | 8-SOIC | MOSFET 12V 7.5A 2W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
![]() |
SI4967DY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 12V 7.5A 2.0W 23mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
![]() |
SI4971DY-T1-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30V 7.2A 1.1W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 25 V,漏極... | ||||||
![]() |
SI4972DY-T1-E3 | Vishay/Siliconix | 8-SOIC | MOSFET DUAL N-CH 30V(D-S) | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
![]() |
SI4972DY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 30V 10.8/7.2A 14.5/26.5mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
![]() |
SI4973DY-T1-E3 | Vishay/Siliconix | 8-SOIC | MOSFET P-CHANNEL 25V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 25 V,漏極... | ||||||
![]() |
SI4973DY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 30V 7.6A 2.0W 23mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 25 V,漏極... |
72/219 首頁(yè) 上頁(yè) [67] [68] [69] [70] [71] [72] [73] [74] [75] [76] [77] 下頁(yè) 尾頁(yè)