圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
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IRF840LCSTRRPBF | Vishay/Siliconix | D2PAK(TO-263) | MOSFET N-Chan 500V 8.0 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 30 V,漏... | ||||||
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IRF840LPBF | Vishay/Siliconix | D2PAK(TO-263) | MOSFET N-Chan 500V 8.0 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF840PBF | Vishay/Siliconix | TO-220-3 | 23,778 | MOSFET N-Chan 500V 8.0 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF840S | Vishay/Siliconix | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | MOSFET N-Chan 500V 8.0 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF840SPBF | Vishay/Siliconix | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | 1,981 | MOSFET N-Chan 500V 8.0 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF840STRL | Vishay/Siliconix | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | MOSFET N-Chan 500V 8.0 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF840STRLPBF | Vishay/Siliconix | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | 2,400 | MOSFET N-Chan 500V 8.0 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF840STRR | Vishay/Siliconix | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | MOSFET N-Chan 500V 8.0 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF840STRRPBF | Vishay/Siliconix | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | 520 | MOSFET N-Chan 500V 8.0 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF8513PBF | International Rectifier | 8-SO | MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC | ||
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏... | ||||||
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IRF8513TRPBF | International Rectifier | 8-SO | MOSFET MOSFT DUAL NCh 30V 11A | ||
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏... | ||||||
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IRF8707GPBF | International Rectifier | 8-SO | MOSFET HEXFET 30V VDSS 11.9mOhm 10V 6.2nC | ||
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏... | ||||||
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IRF8707GTRPBF | International Rectifier | 8-SOIC(0.154",3.90mm 寬) | MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC | ||
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏... | ||||||
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IRF8707PBF | International Rectifier | 8-SO | MOSFET 30V SINGLE N-CH 11.9mOhms 6.2nC | ||
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏... | ||||||
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IRF8707TRPBF | International Rectifier | 8-SOIC(0.154",3.90mm 寬) | 35,961 | MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC Qg | |
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏... | ||||||
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IRF8714GPBF | International Rectifier | 8-SO | MOSFET HEXFET 30V VDSS 8.7mOhm 10V 8.1nC | ||
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏... | ||||||
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IRF8714GTRPBF | International Rectifier | 8-SOIC(0.154",3.90mm 寬) | MOSFET MOSFT 30V 14A 8.7mOhm 8.1nC | ||
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏... | ||||||
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IRF8714PBF | International Rectifier | 8-SO | MOSFET 30V 1 N-CH HEXFET 8.7mOhms 8.1nC | ||
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏... | ||||||
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IRF8714TRPBF | International Rectifier | 8-SOIC(0.154",3.90mm 寬) | 13,024 | MOSFET MOSFT 30V 14A 8.7mOhm 8.1nC Qg | |
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏... | ||||||
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IRF8721GPBF | International Rectifier | 8-SO | MOSFET HEXFET 30V VDSS 8.5mOhm 10V 8.3nC | ||
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏... |
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