圖片 | 型號 | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
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ISL9N322AD3ST | Fairchild Semiconductor | TO-252AA | MOSFET 30V 20a 0.022 Ohm Logic Level N-Ch | ||
參數(shù):制造商:Fairchild Semiconductor,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20... | ||||||
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ISL9N322AP3 | Fairchild Semiconductor | TO-220AB | MOSFET N-Ch PWM Optimized Logic Level | ||
參數(shù):制造商:Fairchild Semiconductor,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20... | ||||||
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ISL9N322AS3ST | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch MOSFET Logic Level | ||
參數(shù):制造商:Fairchild Semiconductor,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20... | ||||||
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ISL9N327AD3ST | Fairchild Semiconductor | TO-252 | MOSFET N-Ch LL UltraFET PWM Optimized | ||
參數(shù):制造商:Fairchild Semiconductor,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20... | ||||||
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ISL9N7030BLP3 | Fairchild Semiconductor | TO-220AB | MOSFET 30V 0.009 Ohm N-Ch Logic Level 74a | ||
參數(shù):制造商:Fairchild Semiconductor,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/... | ||||||
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ISL9N7030BLS3ST | Fairchild Semiconductor | TO-263AB | MOSFET | ||
參數(shù):制造商:Fairchild Semiconductor,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20... | ||||||
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IRG7SC12FPBF | International Rectifier | D2PAK | 250 | MOSFET 330V 8A D2PAK | |
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:N-Channel,配置:Single,最大工作溫度:+ 150 C,安裝風格... | ||||||
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IRG7S313UTRLPBF | International Rectifier | D2PAK | MOSFET 330V 40A D2PAK | ||
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:N-Channel,配置:Single,最大工作溫度:+ 150 C,安裝風格... | ||||||
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IXT-1-1N100S1 | Ixys | - | MOSFET 1.5 Amps 1000V 11 Ohms Rds | ||
參數(shù):制造商:IXYS,RoHS:是,包裝形式:Tube,工廠包裝數(shù)量:94,... | ||||||
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IXTA05N100 | Ixys | TO-263AA | MOSFET 0.75 Amps 1000V 15 Rds | ||
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:1000 V,閘/源擊穿電壓:+/- 30 V,漏極連續(xù)電流:0.75 A,... | ||||||
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IXTA08N100D2 | Ixys | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | MOSFET N-CH MOSFETS (D2) 1000V 800MA | ||
參數(shù):制造商:IXYS,RoHS:是,包裝形式:Tube,... | ||||||
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IXTA08N100P | Ixys | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | MOSFET 0.8 Amps 1000V 20 Rds | ||
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:1000 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)電流:0.8 A,電... | ||||||
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IXTA08N120P | Ixys | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | 93 | MOSFET 0.8 Amps 1200V 25 Rds | |
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:1200 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)電流:0.8 A,電... | ||||||
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IXTA08N50D2 | Ixys | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | MOSFET N-CH MOSFETS (D2) 500V 800MA | ||
參數(shù):制造商:IXYS,RoHS:是,包裝形式:Tube,... | ||||||
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IXTA100N04T2 | Ixys | TO-263AA | MOSFET 100 Amps 40V | ||
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)電流:100 A,電阻汲... | ||||||
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IXTA102N15T | Ixys | TO-263AA | MOSFET 102 Amps 150V 18 Rds | ||
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:150 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)電流:102 A,電阻... | ||||||
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IXTA10N60P | Ixys | TO-263AA | MOSFET 10.0 Amps 600 V 0.74 Ohm Rds | ||
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏極連續(xù)電流:10 A,電阻汲... | ||||||
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IXTA10P50P | Ixys | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | MOSFET -10.0 Amps -500V 1.000 Rds | ||
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 500 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)電流:10 A,電... | ||||||
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IXTA110N055P | Ixys | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | MOSFET 110 Amps 55V 0.0135 Rds | ||
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:55 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)電流:110 A,電阻汲... | ||||||
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IXTA110N055T | Ixys | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | MOSFET 110 Amps 55V 6.7 Rds | ||
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:55 V,漏極連續(xù)電流:110 A,電阻汲極/源極 RDS(導通):0.00... |
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