圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
---|---|---|---|---|---|---|
![]() |
SIA426DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | MOSFET 20V 4.5A 19W 23.6mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
![]() |
SIA427DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | 5,868 | MOSFET 8V 12A 19W 13mohms @ 4.5V | |
參數(shù):制造商:Vishay,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 8 V,閘/源擊穿電壓:5 V,漏極連續(xù)電流:- 12 A,電阻汲極... | ||||||
![]() |
SIA429DJT-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | MOSFET P-Channel 20 V (D-S) | ||
參數(shù):制造商:Vishay,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 20 V,漏極連續(xù)電流:- 12 A,電阻汲極/源極 RDS(導(dǎo)通)... | ||||||
![]() |
SIA430DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | MOSFET 20V 12A 19.2W 13.5mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
![]() |
SIA431DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | 2,982 | MOSFET 20V 12A 19W 25mohm @ 4.5V | |
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 20 V,漏極連續(xù)電流:- 12 A,電阻汲... | ||||||
![]() |
SIA432DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | 3,000 | MOSFET 30V 10.1A 19.2W 20mohm @ 10V | |
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
![]() |
SIA433EDJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | MOSFET -20V 18mOhm@4.5V 12A P-Ch G-III | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 20 V,閘/源擊穿電壓:12 V,漏極連續(xù)... | ||||||
![]() |
SIA436DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | MOSFET 8V 12A 19W 9.4mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:8 V,閘/源擊穿電壓:5 V,漏極連續(xù)電流:1... | ||||||
![]() |
SIA437DJ-T1-GE3 | Vishay Semiconductors | PowerPAK? SC-70-6 | MOSFET 20V 14.5mOhm@4.5V 16A P-Ch | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,... | ||||||
![]() |
SIA438EDJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | MOSFET 20V 6.0A 11.4W 46mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
![]() |
SIA441DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | 46,113 | MOSFET 40V 12A 19W 47mOhms @ 10V | |
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 40 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
![]() |
SIA443DJ-T1-E3 | Vishay/Siliconix | PowerPAK? SC-70-6 | MOSFET 20V 9.0A 15W 45mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
![]() |
SIA443DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | MOSFET 20V 9.0A 15W 45mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
![]() |
SIA444DJT-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | MOSFET N-Channel 30 V (D-S) | ||
參數(shù):制造商:Vishay,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,漏極連續(xù)電流:12 A,電阻汲極/源極 RDS(導(dǎo)通):0.0... | ||||||
![]() |
SIA445EDJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | 2,121 | MOSFET -20V 16.5mOhm@4.5V 12A P-Ch G-III | |
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 20 V,漏極連續(xù)電流:- 12 A,電阻汲... | ||||||
![]() |
SIA447DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | 101,805 | MOSFET -12V 13.5mOhm@4.5V 12A P-Ch G-III | |
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 12 V,閘/源擊穿電壓:- 0.85 V,... | ||||||
![]() |
SIA448DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | MOSFET 20V 12A 19.2W 15mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,漏極連續(xù)電流:12 A,電阻汲極/源極... | ||||||
![]() |
SIA449DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | MOSFET -30V 20mOhm@10V 12A P-Ch G-III | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 30 V,漏極連續(xù)電流:- 12 A,電阻汲... | ||||||
![]() |
SIA450DJ-T1-E3 | Vishay/Siliconix | PowerPAK? SC-70-6 | MOSFET 240V 290mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:240 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
![]() |
SIA450DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | MOSFET 240V 290mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:240 V,閘/源擊穿電壓:+/- 20 V,漏... |
590/1300 首頁(yè) 上頁(yè) [585] [586] [587] [588] [589] [590] [591] [592] [593] [594] [595] 下頁(yè) 尾頁(yè)