圖片 | 型號 | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
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IRF510L | Vishay/Siliconix | TO-262-3 | MOSFET N-Chan 100V 5.6 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF510PBF | Vishay/Siliconix | TO-220-3 | 60,541 | MOSFET N-Chan 100V 5.6 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF510S | Vishay/Siliconix | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | MOSFET N-Chan 100V 5.6 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF510SPBF | Vishay/Siliconix | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | 34,392 | MOSFET N-Chan 100V 5.6 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF510STRL | Vishay/Siliconix | D2PAK(TO-263) | MOSFET N-Chan 100V 5.6 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF510STRLPBF | Vishay/Siliconix | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | 500 | MOSFET N-Chan 100V 5.6 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF510STRR | Vishay/Siliconix | D2PAK(TO-263) | MOSFET N-Chan 100V 5.6 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF510STRRPBF | Vishay/Siliconix | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | 1,618 | MOSFET N-Chan 100V 5.6 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF520 | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 100V 9.2 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF520_R4941 | Fairchild Semiconductor | MOSFET TO-220AB N-Ch Power | |||
參數(shù):制造商:Fairchild Semiconductor,RoHS:否,... | ||||||
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IRF520A | Fairchild Semiconductor | TO-220AB | MOSFET 9.2A 100V .4 OHM | ||
參數(shù):制造商:Fairchild Semiconductor,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘... | ||||||
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IRF520NPBF | International Rectifier | TO-220-3 | 8,407 | MOSFET MOSFT 100V 9.7A 200mOhm 16.7nC | |
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:20 V,... | ||||||
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IRF520NSTRLPBF | International Rectifier | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | 3,290 | MOSFET MOSFT 100V 9.5A 200mOhm 16.7nC | |
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:20 V,... | ||||||
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IRF520PBF | Vishay/Siliconix | TO-220-3 | 3,320 | MOSFET N-Chan 100V 9.2 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF520S | Vishay/Siliconix | D2PAK(TO-263) | MOSFET N-Chan 100V 9.2 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRF5210LPBF | International Rectifier | TO-262-3,長引線,I2Pak,TO-262AA | MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC | ||
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 100 V,閘/源擊穿電壓:20 ... | ||||||
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IRF5210PBF | International Rectifier | TO-220-3 | 23,662 | MOSFET MOSFT PCh -100V -40A 60mOhm 120nC | |
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 100 V,閘/源擊穿電壓:20 ... | ||||||
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IRF5210SPBF | International Rectifier | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | MOSFET 1 P-CH -100V HEXFET 60mOhms 120nC | ||
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 100 V,閘/源擊穿電壓:20 ... | ||||||
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IRF5210STRLPBF | International Rectifier | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | 993 | MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC | |
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 100 V,閘/源擊穿電壓:20 ... | ||||||
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IRF5210STRRPBF | International Rectifier | D2PAK | 5 | MOSFET 1 P-CH -100V HEXFET 60mOhms 120nC | |
參數(shù):制造商:International Rectifier,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 100 V,閘/源擊穿電壓:+/-... |
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