NXP Semiconductors
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圖片 | 型號 | 品牌 | 封裝 | 數量 | 描述 | PDF資料 |
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PSMN165-200K /T3 | NXP Semiconductors | SO-8 | MOSFET TAPE13 MOSFET | ||
參數:制造商:NXP,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏極連續... | ||||||
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PSMN165-200K,518 | NXP Semiconductors | 8-SOIC(0.154",3.90mm 寬) | MOSFET TAPE13 MOSFET | ||
參數:制造商:NXP,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏極連續... | ||||||
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PSMN1R0-30YLC,115 | NXP Semiconductors | SC-100,SOT-669 | 14,250 | MOSFET N-CH 30 V 1.15 mOhms LOGIC LEVEL MOSFET | |
參數:制造商:NXP,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏極連續電流:100 A,電阻汲極/源極 ... | ||||||
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PSMN1R1-25YLC,115 | NXP Semiconductors | SC-100,SOT-669 | 3,791 | MOSFET N-Ch 25V 1.15 mOhms | |
參數:制造商:NXP,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:25 V,閘/源擊穿電壓:20 V,漏極連續電流:100 A,電阻汲極/源極 ... | ||||||
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PSMN1R1-30EL,127 | NXP Semiconductors | I2PAK | MOSFET N-Ch 30V 1.3 mOhms | ||
參數:制造商:NXP,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏極連續電流:120 A,電阻汲極/源極 ... | ||||||
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PSMN1R1-30PL,127 | NXP Semiconductors | TO-220-3 | 2,223 | MOSFET N-Ch 30V 1.3 mOhms | |
參數:制造商:NXP,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏極連續電流:120 A,電阻汲極/源極 ... | ||||||
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PSMN1R1-40BS,118 | NXP Semiconductors | D2PAK | 677 | MOSFET Std N-chanMOSFET | |
參數:制造商:NXP,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:120 A,電阻汲極... | ||||||
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PSMN1R2-25YL,115 | NXP Semiconductors | SOT-1023,4-LFPAK | MOSFET N-CH 25V 1.2 mOhm Logic Level MOSFET | ||
參數:制造商:NXP,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:25 V,漏極連續電流:100 A,電阻汲極/源極 R... | ||||||
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PSMN1R2-25YLC,115 | NXP Semiconductors | SC-100,SOT-669 | 1,225 | MOSFET N-Ch 25V 1.3 mOhms | |
參數:制造商:NXP,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:25 V,閘/源擊穿電壓:20 V,漏極連續電流:100 A,電阻汲極/源極 ... | ||||||
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PSMN1R2-30YLC,115 | NXP Semiconductors | SC-100,SOT-669 | 1,460 | MOSFET N-Ch 30V 1.25mOhms | |
參數:制造商:NXP,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏極連續電流:100 A,電阻汲極/源極 ... | ||||||
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PSMN1R3-30YL,115 | NXP Semiconductors | SOT-1023,4-LFPAK | 1,400 | MOSFET N-CH 30V 1.3 mOhm Logic Level MOSFET | |
參數:制造商:NXP,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,漏極連續電流:100 A,電阻汲極/源極 R... | ||||||
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PSMN1R5-25YL,115 | NXP Semiconductors | LFPAK56,Power-SO8 | MOSFET N-CH TRENCHMOS Logic level FET | ||
參數:制造商:NXP,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:25 V,漏極連續電流:100 A,電阻汲極/源極 R... | ||||||
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PSMN1R5-30YL,115 | NXP Semiconductors | LFPAK56,Power-SO8 | MOSFET N-CHAN 30V 100A | ||
參數:制造商:NXP,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:100 A,電阻汲極... | ||||||
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PSMN1R5-30YLC,115 | NXP Semiconductors | SC-100,SOT-669 | 675 | MOSFET N-Ch 30V 1.55mOhms | |
參數:制造商:NXP,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏極連續電流:100 A,電阻汲極/源極 ... | ||||||
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PSMN1R5-40ES,127 | NXP Semiconductors | I2PAK | MOSFET N-Ch 40V 1.6 mOhms | ||
參數:制造商:NXP,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:20 V,漏極連續電流:120 A,電阻汲極/源極 ... | ||||||
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PSMN1R5-40PS,127 | NXP Semiconductors | TO-220-3 | MOSFET N-Ch 40V 1.6 mOhms | ||
參數:制造商:NXP,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:20 V,漏極連續電流:120 A,電阻汲極/源極 ... | ||||||
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PSMN1R6-30BL,118 | NXP Semiconductors | D2PAK | MOSFET Std N-chanMOSFET | ||
參數:制造商:NXP,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:100 A,電阻汲極... | ||||||
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PSMN1R6-30PL,127 | NXP Semiconductors | TO-220AB | MOSFET N-CH 30V 1.7 mOhm Logic Level MOSFET | ||
參數:制造商:NXP,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,漏極連續電流:100 A,電阻汲極/源極 R... | ||||||
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PSMN1R7-25YLC,115 | NXP Semiconductors | LFPAK56,Power-SO8 | MOSFET N-Ch 25V 1.9 mOhms | ||
參數:制造商:NXP,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:25 V,閘/源擊穿電壓:20 V,漏極連續電流:100 A,電阻汲極/源極 ... | ||||||
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PSMN1R7-30YL,115 | NXP Semiconductors | SC-100,SOT-669 | 1,500 | MOSFET <=30V N CH TRENCHFET | |
參數:制造商:NXP,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極連續電... |
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