Vishay/Siliconix
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Vishay/Siliconix功率MOSFET晶體管和集成電路 (IC)用于管理和轉(zhuǎn)換計(jì)算機(jī)、手機(jī)和通信基礎(chǔ)架構(gòu)中的電源,也可用計(jì)算機(jī)磁盤驅(qū)動(dòng)器和汽車系統(tǒng)中的運(yùn)動(dòng)控制。 Vishay/Siliconix模擬開關(guān)IC用于對儀表儀器和多種工業(yè)產(chǎn)品中的模擬信號進(jìn)行感應(yīng)、開關(guān)和路徑設(shè)定。 |
圖片 | 型號 | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
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SUD06N10-225L | Vishay/Siliconix | TO-252-3 | MOSFET 100V 6.5A 20W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SUD06N10-225L-E3 | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | MOSFET 100V 6.5A 20W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SUD08P06-155L-E3 | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | MOSFET 60V 8.4A 25W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 60 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
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SUD10P06-280L | Vishay/Siliconix | TO-252-3 | MOSFET 60V 10A 37W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD10P06-280L-E3 | Vishay/Siliconix | TO-252-3 | MOSFET 60V 10A 37W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD15N06-90L | Vishay/Siliconix | TO-252-3 | MOSFET 60V 15A 37W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD15N06-90L-E3 | Vishay/Siliconix | TO-252-3 | MOSFET 60V 15A 37W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD15N15-95 | Vishay/Siliconix | TO-252-3 | MOSFET 150V 15A 62W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:150 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SUD15N15-95-E3 | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | 12,174 | MOSFET 150V 15A 62W | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:150 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SUD15P01-52-E3 | Vishay/Siliconix | TO-252-3 | MOSFET 8.0V 15A 21.4W 52mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:8 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)... | ||||||
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SUD17N25-165-E3 | Vishay/Siliconix | TO-252AA | MOSFET N-CH 250V 17A | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:250 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SUD19N20-90 | Vishay/Siliconix | TO-252-3 | MOSFET 200V 17.5A 100W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SUD19N20-90-E3 | Vishay/Siliconix | TO-252AA | MOSFET 200V 17.5A 100W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SUD19N20-90-T4-E3 | Vishay/Siliconix | TO-252AA | MOSFET N-CH 200V 19A | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SUD19P06-60-E3 | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | 4,090 | MOSFET 60V 19A 38.5W | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD19P06-60-GE3 | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | 96,117 | MOSFET 60V 19A 38.5W 60mohm @ 10V | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD19P06-60L-E3 | Vishay/Siliconix | TO-252AA | MOSFET 60V 19A 46W 60mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 60 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
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SUD23N06-31-GE3 | Vishay/Siliconix | TO-252-3,DPak(2 引線 + 接片),SC-63 | MOSFET N-Ch MOSFET 60V 31 mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD23N06-31L | Vishay/Siliconix | TO-252-3 | MOSFET 60V 23A 100W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SUD23N06-31L-E3 | Vishay/Siliconix | TO-252AA | MOSFET 60V 23A 100W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... |
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