圖片 | 型號 | 品牌 | 封裝 | 數量 | 描述 | PDF資料 |
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TPS1120DG4 | Texas Instruments | SOIC-8 | MOSFET Dual P-Ch Enh-Mode MOSFET | ||
參數:制造商:Texas Instruments,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:15 V,閘/源擊穿電壓:... | ||||||
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TPS1120DR | Texas Instruments | 8-SOIC | 1,254 | MOSFET Dual P-Ch Enh-Mode MOSFET | |
參數:制造商:Texas Instruments,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:15 V,閘/源擊穿電壓:... | ||||||
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TPS1120DRG4 | Texas Instruments | SOIC-8 | MOSFET Dual P-Ch Enh-Mode MOSFET | ||
參數:制造商:Texas Instruments,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:15 V,閘/源擊穿電壓:... | ||||||
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TP1220L | Vishay/Siliconix | TO-92 | MOSFET 120V 20 OHM | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:過渡期間,晶體管極性:P-Channel,汲極/源極擊穿電壓:120 V,閘/源擊穿電壓:+/- 20 ... | ||||||
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TPC6503(TE85L,F,M) | Toshiba | VS-6(2.9x2.8) | MOSFET NPN hFE 400 to 1000 VCE 0.12V tF 45ns | ||
參數:Toshiba Semiconductor and Storage|卷帶(TR)|U-MOSVII|停產|NPN|1.5 A|30 V|120mV @ 10mA... | ||||||
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TPH12008NH,L1Q | Toshiba | 8-PowerVDFN | MOSFET N-Ch 80V 1490pF 22nC 12.3mOhm 44A 48W | ||
參數:制造商:Toshiba,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:80 V,閘/源擊穿電壓:20 V,漏極連續電流:44 A,電阻汲極/... | ||||||
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TPH14006NH,L1Q | Toshiba | 8-SOP Advance(5x5) | MOSFET N-Ch 60V FET 14A 32W 1020pF 16nC | ||
參數:制造商:Toshiba,RoHS:是,包裝形式:Reel,... | ||||||
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TPH1400ANH,L1Q | Toshiba | 8-PowerVDFN | 7,666 | MOSFET N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC | |
參數:制造商:Toshiba,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:20 V,漏極連續電流:42 A,電阻汲極... | ||||||
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TPH4R606NH,L1Q | Toshiba | 8-SOP Advance(5x5) | MOSFET N-Ch 60V FET 32A 63W 3050pF 49nC | ||
參數:制造商:Toshiba,RoHS:是,包裝形式:Reel,... | ||||||
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TPH5R906NH,L1Q | Toshiba | 8-SOP Advance(5x5) | MOSFET N-Ch 60V FET 28A 57W 2340pF 38nC | ||
參數:制造商:Toshiba,RoHS:是,包裝形式:Reel,... | ||||||
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TPH7R506NH,L1Q | Toshiba | 8-PowerVDFN | 1,861 | MOSFET N-Ch 60V FET 22A 45W 1785pF 31nC | |
參數:制造商:Toshiba,RoHS:是,包裝形式:Reel,... | ||||||
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TPH8R008NH,L1Q | Toshiba | 8-PowerVDFN | MOSFET N-Ch 80V 2300pF 35nC 8.0mOhm 63A 61W | ||
參數:制造商:Toshiba,RoHS:是,包裝形式:Reel,... | ||||||
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TPH8R80ANH,L1Q | Toshiba | 8-PowerVDFN | MOSFET N-Ch 120V 59A 61W UMOSVIII 2180pF 33nC | ||
參數:制造商:Toshiba,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:20 V,漏極連續電流:59 A,電阻汲極... | ||||||
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TPCP8F01(TE85L,F) | Toshiba | MOSFET Transistr PNP 30V 3A MOSFET Nch 20V .1A | |||
參數:制造商:Toshiba,產品種類:MOSFET,RoHS:是,包裝形式:Reel,工廠包裝數量:3000,... | ||||||
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TPCP8F01(TE85L,F,M | Toshiba | PS-8 | MOSFET Transistor PNP 20V, 3A | ||
參數:制造商:Toshiba,產品種類:MOSFET,RoHS:是,包裝形式:Reel,工廠包裝數量:3000,... | ||||||
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TPCP8J01(TE85L,F) | Toshiba | MOSFET N-Ch + NPN -32V -6A 50V 0.1A | |||
參數:制造商:Toshiba,產品種類:MOSFET,RoHS:是,包裝形式:Reel,工廠包裝數量:3000,... | ||||||
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TPCP8J01(TE85L,F,M | Toshiba | PS-8 | MOSFET MOSFET P-CH/NPN 32V, 6A | ||
參數:制造商:Toshiba,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 32 V,電阻汲極/源極 RDS(導通):... | ||||||
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TPCS8004(TE12L,Q) | Toshiba | TSSOP-8 | MOSFET N-Cha 200V 1.3A 0.8Ohms | ||
參數:制造商:Toshiba,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
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TPCS8007-H(TE12L,Q | Toshiba | TSSOP-8 | MOSFET MOSFET 200V 1.9A | ||
參數:制造商:Toshiba,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
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TPCS8008-H(TE12L,Q | Toshiba | TSSOP-8 | MOSFET MOSFET NCh 250V 1.7A | ||
參數:制造商:Toshiba,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:250 V,閘/源擊穿電壓:+/- 20 V,... |
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