| 圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
|---|---|---|---|---|---|---|
|
NDB708A | Fairchild Semiconductor | TO-263AB | MOSFET DISC BY MFG 2/02 | ||
| 參數(shù)：制造商：Fairchild Semiconductor，RoHS：否，晶體管極性：N-Channel，汲極/源極擊穿電壓：80 V，閘/源擊穿電壓：+/- 20... | ||||||
|
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NDB710A | Fairchild Semiconductor | TO-263AB | MOSFET DISC BY MFG 2/02 | ||
| 參數(shù)：制造商：Fairchild Semiconductor，RoHS：否，晶體管極性：N-Channel，汲極/源極擊穿電壓：100 V，閘/源擊穿電壓：+/- 2... | ||||||
|
NDC631N | Fairchild Semiconductor | SOT-23-6 細(xì)型，TSOT-23-6 | MOSFET N-Ch LL FET Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：20 V，閘/... | ||||||
|
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NDC631N_D87Z | Fairchild Semiconductor | SSOT-6 | MOSFET N-Ch LL FET Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：20 V，閘/... | ||||||
|
NDC631N_F095 | Fairchild Semiconductor | SuperSOT-6 | MOSFET 20V 4.1A N-CH ENHANCEMENT MODE | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：20 V，閘/... | ||||||
|
NDC632P | Fairchild Semiconductor | SuperSOT?-6 | MOSFET P-Channel FET LL Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：P-Channel，汲極/源極擊穿電壓：- 20 V，... | ||||||
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NDC632P_F095 | Fairchild Semiconductor | SuperSOT-6 | MOSFET -20V -2.7A P-CH ENHANCEMENT MODE | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：P-Channel，汲極/源極擊穿電壓：20 V，閘/... | ||||||
|
|
NDC651N | Fairchild Semiconductor | SuperSOT?-6 | MOSFET N-Ch LL FET Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：30 V，閘/... | ||||||
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NDC651N_F095 | Fairchild Semiconductor | SuperSOT-6 | MOSFET 30V 3.2A N-CH ENHANCEMENT MODE | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：30 V，閘/... | ||||||
|
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NDC651N_Q | Fairchild Semiconductor | SSOT-6 | MOSFET N-Ch LL FET Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：否，晶體管極性：N-Channel，汲極/源極擊穿電壓：30 V，閘/... | ||||||
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NDC652P | Fairchild Semiconductor | SuperSOT?-6 | MOSFET SO-6 P-CH LOGIC | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：P-Channel，汲極/源極擊穿電壓：- 30 V，... | ||||||
|
|
NDC652P_F095 | Fairchild Semiconductor | SuperSOT-6 | MOSFET -30V 2.4A P-CH ENHANCEMENT MODE | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：P-Channel，汲極/源極擊穿電壓：30 V，閘/... | ||||||
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NDC652P_Q | Fairchild Semiconductor | SSOT-6 | MOSFET SO-6 P-CH LOGIC | ||
| 參數(shù)：制造商：Fairchild Semiconductor，RoHS：否，晶體管極性：P-Channel，汲極/源極擊穿電壓：- 30 V，閘/源擊穿電壓：- 20... | ||||||
|
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NDC7001C | Fairchild Semiconductor | SuperSOT?-6 | MOSFET Dual N/P Channel FET Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：N and P-Channel，汲極/源極擊穿電壓：+... | ||||||
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NDC7001C_Q | Fairchild Semiconductor | SSOT-6 | MOSFET Dual N/P Channel FET Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，RoHS：否，晶體管極性：N and P-Channel，汲極/源極擊穿電壓：+/- 60 V，閘/源擊... | ||||||
|
|
NDC7002N_Q | Fairchild Semiconductor | SSOT-6 | MOSFET SO-6 N-CH ENHANCE | ||
| 參數(shù)：制造商：Fairchild Semiconductor，RoHS：否，晶體管極性：N-Channel，汲極/源極擊穿電壓：50 V，閘/源擊穿電壓：20 V，漏... | ||||||
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NDC7002N_SB9G007 | Fairchild Semiconductor | SuperSOT?-6 | MOSFET 50V DUAL N-CHANNEL | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，包裝形式：Reel，工廠包裝數(shù)量：3000，... | ||||||
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NDC7003P | Fairchild Semiconductor | SuperSOT?-6 | MOSFET Dual P-Ch FET Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：P-Channel，汲極/源極擊穿電壓：- 60 V，... | ||||||
|
NDD02N60Z-1G | ON Semiconductor | I-PAK | MOSFET NFET IPAK 600V 2.2A 4.8R | ||
| 參數(shù)：制造商：ON Semiconductor，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：600 V，閘/源擊穿電壓：30 V，漏極連續(xù)電流：... | ||||||
|
NDD02N60ZT4G | ON Semiconductor | DPAK | MOSFET NFET IPAK 600V 2.2A 4.8R | ||
| 參數(shù)：制造商：ON Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：600 V，閘/源擊穿電壓：... | ||||||
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