圖片 | 型號 | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
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CSD17552Q3A | Texas Instruments | 8-SON(3.3x3.3) | MOSFET 30V N-Channel MOSFET | ||
參數(shù):制造商:Texas Instruments,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏極連續(xù)電流:... | ||||||
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CSD17552Q5A | Texas Instruments | 8-PowerTDFN | 2,460 | MOSFET 30-V N-Ch NexFET Pwr MOSFET | |
參數(shù):制造商:Texas Instruments,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏極連續(xù)電流:... | ||||||
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CSD17553Q5A | Texas Instruments | 8-PowerTDFN | 9,653 | MOSFET NCh NexFET Pwr MOSFET | |
參數(shù):制造商:Texas Instruments,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,漏極連續(xù)電流:100 A,電阻汲極/源極 RD... | ||||||
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CSD17555Q5A | Texas Instruments | 8-VSONP(5x6) | MOSFET 30V N-ch NexFET Pwr MOSFET | ||
參數(shù):制造商:Texas Instruments,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,漏極連續(xù)電流:100 A,電阻汲極/源極 RD... | ||||||
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CSD17559Q5 | Texas Instruments | 8-PowerTDFN | 3,766 | MOSFET 30V N Ch NexFET Pwr MOSFET | |
參數(shù):制造商:Texas Instruments,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏極連續(xù)電流:... | ||||||
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CSD18501Q5A | Texas Instruments | 8-PowerTDFN | MOSFET 40V N-Channel NexFET Power MOSFET | ||
參數(shù):制造商:Texas Instruments,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,漏極連續(xù)電流:1... | ||||||
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CSD18502KCS | Texas Instruments | TO-220-3 | 181 | MOSFET 40-V, N-Chanel NxFT Pwr MOSFETs | |
參數(shù):制造商:Texas Instruments,RoHS:是,晶體管極性:N-Channel,漏極連續(xù)電流:100 A,電阻汲極/源極 RDS(導(dǎo)通):3.3 mO... | ||||||
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CSD18502Q5B | Texas Instruments | 8-PowerTDFN | 1,650 | MOSFET 40-V N-Ch NexFET Pwr MOSFET | |
參數(shù):制造商:Texas Instruments,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:20 V,漏極連續(xù)電流:... | ||||||
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CSD18503KCS | Texas Instruments | TO-220-3 | 285 | MOSFET 40V N-Ch NexFET Power MOSFET | |
參數(shù):制造商:Texas Instruments,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:20 V,漏極連續(xù)電流:... | ||||||
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CSD18503Q5A | Texas Instruments | 8-VSONP(5x6) | MOSFET 40V N-Channel NexFET Power MOSFET | ||
參數(shù):制造商:Texas Instruments,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,漏極連續(xù)電流:1... | ||||||
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CSD18504KCS | Texas Instruments | TO-220-3 | 120 | MOSFET 40V N-Ch NexFET Pwr MOSFET | |
參數(shù):制造商:Texas Instruments,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:20 V,漏極連續(xù)電流:... | ||||||
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CSD18504Q5A | Texas Instruments | 8-PowerTDFN | 11,169 | MOSFET 40V N-Channel NexFET Power MOSFET | |
參數(shù):制造商:Texas Instruments,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,漏極連續(xù)電流:5... | ||||||
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CSD18531Q5A | Texas Instruments | 8-PowerTDFN | MOSFET 60V N-Channel NexFET Power MOSFET | ||
參數(shù):制造商:Texas Instruments,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,漏極連續(xù)電流:1... | ||||||
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CSD18532KCS | Texas Instruments | TO-220-3 | 4,115 | MOSFET 60-V N-Chanel NxFT Pwr MOSFETs | |
參數(shù):制造商:Texas Instruments,RoHS:是,晶體管極性:N-Channel,漏極連續(xù)電流:100 A,電阻汲極/源極 RDS(導(dǎo)通):4.2 mO... | ||||||
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CSD18532Q5B | Texas Instruments | 8-PowerTDFN | MOSFET 60-V N-Ch NexFET Pwr MOSFET | ||
參數(shù):制造商:Texas Instruments,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:20 V,漏極連續(xù)電流:... | ||||||
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CSD18533KCS | Texas Instruments | TO-220-3 | MOSFET 40V N-Chnl NxFT Pwr MSFT .. | ||
參數(shù):制造商:Texas Instruments,RoHS:是,晶體管極性:N-Channel,漏極連續(xù)電流:100 A,電阻汲極/源極 RDS(導(dǎo)通):6.9 mO... | ||||||
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CSD18533Q5A | Texas Instruments | 8-PowerTDFN | MOSFET 60V N-Chnl NexFET Pwr MSFT, CSD18533Q5 | ||
參數(shù):制造商:Texas Instruments,RoHS:是,晶體管極性:N-Channel,漏極連續(xù)電流:100 A,電阻汲極/源極 RDS(導(dǎo)通):6.5 mO... | ||||||
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CSD18534KCS | Texas Instruments | TO-220-3 | 2,919 | MOSFET 60V N-Chnl NexFET Pwr MOSFET | |
參數(shù):制造商:Texas Instruments,RoHS:是,晶體管極性:N-Channel,漏極連續(xù)電流:100 A,電阻汲極/源極 RDS(導(dǎo)通):10.2 m... | ||||||
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CSD18534Q5A | Texas Instruments | 8-PowerTDFN | MOSFET 60V N-Ch NexFET Pwr MOSFET | ||
參數(shù):制造商:Texas Instruments,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:20 V,漏極連續(xù)電流:... | ||||||
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CSD23201W10 | Texas Instruments | 4-UFBGA,DSBGA | MOSFET P-Ch NexFET Power MOSFETs | ||
參數(shù):制造商:Texas Instruments,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:... |
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